The 61st JSAP Spring Meeting, 2014

Presentation information

Oral presentation

06. Thin Films and Surfaces » 6.3 Oxide-based electronics

[19p-E8-1~21] 6.3 Oxide-based electronics

Wed. Mar 19, 2014 1:15 PM - 6:45 PM E8 (E202)

1:30 PM - 1:45 PM

[19p-E8-2] Consideration on Criterion of Resistive Transition of SiO2 Film Fabricated by Sputter Deposition

Rintaro Yamaguchi1, Hirotaka Kongo1, Honfei Lu1, Shingo Sato1, Yasuhisa Omura1, Kazuhiro Nakamura1 (Kansai Univ.1)

Keywords:絶縁膜破壊,抵抗変化メモリ