[19p-E8-1~21] 6.3 Oxide-based electronics

[19p-E8-2] Consideration on Criterion of Resistive Transition of SiO2 Film Fabricated by Sputter Deposition

Rintaro Yamaguchi¹, Hirotaka Kongo¹, ^○Honfei Lu¹, Shingo Sato¹, Yasuhisa Omura¹, Kazuhiro Nakamura¹ (Kansai Univ.¹)

Keywords:絶縁膜破壊,抵抗変化メモリ