[19p-E8-1~21] 6.3 Oxide-based electronics

▼ [19p-E8-6] Analysis of Degradation Mechanism on Bottom Gate Amorphous InGaZnO Thin-Film Transistors with Siloxane Passivation Layer

^○（M1）Chaiyanan Kulchaisit^1,2, Yasuaki Ishikawa^1,2, Yoshihiro Ueoka^1,2, Bermundo Juan Paolo^1,2, Masahiro Horita^1,2, Yukiharu Uraoka^1,2 (NAIST¹, CREST²)

Keywords:Siloxane Passivation,Thin Film Transistors,Amorphous InGaZnO