[19p-F12-1~20] 13.4 Devices/Integration Technologies

▲ [19p-F12-14] Ultrathin body Germanium-on-insulator (GeOI) MOSFETs fabricated by transfer of epitaxial Ge films on III-V substrates

^○Xiao Yu^1,2, Rui Zhang^1,2, Jian Kang^1,2, Tatsuro Maeda³, Taro Itatani³, Takenori Osada⁴, Masahiko Hata⁴, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (Univ. of Tokyo¹, JST-CREST², AIST³, Sumitomo Chem.⁴)

Keywords:GeOI,MOSFET