High Mobility Strained-Ge pMOSFETs with 0.7-nm Ultrathin EOT using Plasma Post Oxidation HfO2/Al2O3/GeOx Gate Stacks

Rui Zhang

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Oral presentation

13. Semiconductors A (Silicon) » 13.4 Devices/Integration Technologies

[19p-F12-1~20] 13.4 Devices/Integration Technologies

Wed. Mar 19, 2014 1:30 PM - 6:45 PM F12 (F408)

5:15 PM - 5:30 PM

▲ [19p-F12-15] High Mobility Strained-Ge pMOSFETs with 0.7-nm Ultrathin EOT using Plasma Post Oxidation HfO₂/Al₂O₃/GeO_x Gate Stacks

^○（P）Rui Zhang^1,2,4, Winston Chern³, Xiao Yu^1,2, Mitsuru Takenaka^1,2, Hoyt Judy³, Shinichi Takagi^1,2 (Univ. Tokyo¹, JST CREST², MIT³, Zhejiang Univ.⁴)

Keywords:Strained-Germanium,MOSFET,Post oxidation

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Presentation information

[19p-F12-1~20] 13.4 Devices/Integration Technologies

▲ [19p-F12-15] High Mobility Strained-Ge pMOSFETs with 0.7-nm Ultrathin EOT using Plasma Post Oxidation HfO2/Al2O3/GeOx Gate Stacks

▲ [19p-F12-15] High Mobility Strained-Ge pMOSFETs with 0.7-nm Ultrathin EOT using Plasma Post Oxidation HfO₂/Al₂O₃/GeO_x Gate Stacks