The 61st JSAP Spring Meeting, 2014

Presentation information

Print

Oral presentation

13. Semiconductors A (Silicon) » 13.4 Devices/Integration Technologies

[19p-F12-1~20] 13.4 Devices/Integration Technologies

Wed. Mar 19, 2014 1:30 PM - 6:45 PM F12 (F408)

5:30 PM - 5:45 PM

[19p-F12-16] Demonstration of poly-Ge short channel p- and n-MOSFETs fabricated by flash lamp annealing

○Koji Usuda1, Yoshiki Kamata1, Yuuichi Kamimuta1, Takahiro Mori1, Masahiro Koike1, Tsutomu Tezuka1 (AIST-GNC1)

Keywords:多結晶,Ge,MOSFET