[19p-F12-1~20] 13.4 Devices/Integration Technologies

[19p-F12-7] Magnetic field dependence of p-Channel Si Double Quantum Dot by Hole Transport

^○Ko Yamada¹, Tetsuo Kodera^1,2,3, Tomohiro Kambara¹, Kosuke Horibe¹, Yukio Kawano¹, Shunri Oda¹ (QNERC, Tokyo Tech¹, NanoQuine, Univ. of Tokyo², JST-PRESTO³)

Keywords:量子ドット