[19p-F6-1~18] 8.4 Plasma etching

▲ [19p-F6-15] Damage-free AlGaN/GaN Recess-Gate Etching using Cl₂ Neutral Beam

^○Halubai Sekhar¹, Tomohiro Kubota¹, Takeru Okada^1,4, Jitsuo Ohta³, Hiroshi Fujioka^3,4, Seiji Samukawa^1,2,4 (IFS, Tohoku Univ.¹, WPI-AIMR, Tohoku Univ.², IIS, Univ. of Tokyo³, JST-CREST⁴)

Keywords:エッチングダメージ,中性粒子ビームエッチング,AlGaN/GaN