Influence of impurities on the annealing kinetics of defects in Silicon irradiated with low dose electron

Akira Kiyoi

Presentation information

Oral presentation

15. Crystal Engineering » 15.8 Crystal evaluation, impurities and crystal defects

[19p-F9-1~17] 15.8 Crystal evaluation, impurities and crystal defects

Wed. Mar 19, 2014 1:00 PM - 5:45 PM F9 (F401)

4:45 PM - 5:00 PM

[19p-F9-14] Influence of impurities on the annealing kinetics of defects in Silicon irradiated with low dose electron

^○Akira Kiyoi¹, Masayuki Tanaka¹, Tsuyoshi Kawakami¹, Hirozo Tsuruta¹, Junji Tanimura¹, Tadaharu Minato², Tarutani Masayoshi², Kazutoyo Takano³ (Mitsubishi Electric Co. Advanced Technology R&D Lab¹, Mitsubishi Electric Co. Power Device Works², Melco Semiconductor Engineering³)

Keywords:Silicon,defect,photoluminescence