The 61st JSAP Spring Meeting, 2014

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15. Crystal Engineering » 15.8 Crystal evaluation, impurities and crystal defects

[19p-F9-1~17] 15.8 Crystal evaluation, impurities and crystal defects

Wed. Mar 19, 2014 1:00 PM - 5:45 PM F9 (F401)

1:30 PM - 1:45 PM

[19p-F9-3] Thermal stress induced void formation near defect free silicon crystal growth condition and implications for 450 mm wafer inspection

○Eiji Kamiyama1, Koji Sueoka1, Koji Araki2, Koji Izunome2 (Okayama Pref. Univ.1, GlobalWafers Japan Corp. Ltd.2)

Keywords:ボイド,シリコンウェーハ,検査