[19p-F9-1~17] 15.8 Crystal evaluation, impurities and crystal defects

[19p-F9-5] The mechanism of dopant diffusion in Si crystals

^○Masashi Suezawa¹, Kaihei Inoue¹, Yoshiaki Iijima¹, Ichiro Yonenaga¹ (Tohoku Univ., IMR¹)

Keywords:拡散機構,シリコン結晶,ドーパント