[19p-F9-1~17] 15.8 Crystal evaluation, impurities and crystal defects

[19p-F9-8] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (6) Behavior of VO and CiOi in irradiation and annealing

^○Naohisa Inoue^1,5, Yasunori Goto², Hirofumi Seki³, Kaori Watanabe⁴, Yuichi Kawamura⁵ (Tokyo Univ. Agr. & Technol.¹, Toyota Motor Co.², Toray Research Center³, Systems Engineering Inc.⁴, Osaka Pref. Univ.⁵)

Keywords:シリコン,粒子線照射,赤外吸収