[19p-PG2-1~12] 13.2 Insulator technology

[19p-PG2-11] Determination of oxide traps distribution in high-k/InGaAs MOS capacitor by capacitance-voltage measurement

^○Chunmeng Dou¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui¹, Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. Frontier research center¹, Tokyo Tech. Interdisciplinary Graduate School of Science and Engineering²)

Keywords:oxide traps,high-k,III-V