[19p-PG2-1~12] 13.2 Insulator technology

[19p-PG2-5] Physical understanding of La-silicate gate dielectrics thermally formed by interface reaction on Si(110) and (111)

^○Takuya Seki¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, IGSSE²)

Keywords:high-k,Gate insulator,semiconductor