Oral presentation

[18a-D8-1~12] 13.2 Insulator technology

Tue. Mar 18, 2014 9:00 AM - 12:15 PM D8 (D215)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

△ [18a-D8-1] Control of dielectric constant of Diamond-Like Carbon Films grown by Photoemission-Assisted Plasma-Enhanced CVD: From Low-k to High-k

^○（M1）Hiroyuki Hayashi¹, Susumu Takabayashi², Meng Yang¹, Shuichi Ogawa¹, Taiichi Otsuji², Yuji Takakuwa¹ (IMRAM, Tohoku Univ.¹, RIEC, Tohoku Univ.²)

9:15 AM - 9:30 AM

△ [18a-D8-2] Evaluation of short range order in SiO2 thin-film by grazing-incidence wide and small-angle X-ray scattering

^○Kohki Nagata^1,4, Hiroki Tokutake¹, Masaya Nagasaka¹, Atsushi Ogura¹, Ichiro Hirosawa², Tomoyuki Suwa³, Akinobu Teramoto³, Takeo Hattori³, Tadahiro Ohmi³ (Meiji Univ.¹, JASRI², Tohoku Univ.³, JSPS Research fellow⁴)

9:30 AM - 9:45 AM

[18a-D8-3] Silicon oxide film was formed with mixed silicone-oil and ozone gas at low-temperature

^○Takuya Ito¹, Kensuke Nishioka¹ (Miyazaki Univ.¹)

9:45 AM - 10:00 AM

△ [18a-D8-4] Detailed study of the relationship between SiO2 degradation and hydrogen movement using nuclear reaction analysis

^○Yusuke Higashi¹, Riichiro Takaishi¹, Masamichi Suzuki¹, Koichi Kato¹, Mitsuhiro Tomita¹, Yuichiro Mitani¹, Masuaki Matsumoto², Shohei Ogura², Katsuyuki Fukutani² (Toshiba Corp.¹, Tokyo Univ.²)

10:00 AM - 10:15 AM

[18a-D8-5] Diffusion-reaction mechanisms of nitriding species (NH_x) in SiO₂, Si₃N₄ and Si

^○Yasushi Nakasaki¹, Izumi Hirano¹, Masayasu Miyata¹, Koichi Kato¹, Yuuichiro Mitani¹, Hiroki Yamashita², Hiroshi Akahori² (Toshiba Corp. R&D Center¹, Toshiba S&S Products Company²)

10:15 AM - 10:30 AM

▲ [18a-D8-6] Effects of biaxially-tensile strain on properties of Si/SiO2 interface states generated by electrical stress

^○Weili Cai^1,2, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (Tokyo Univ.¹, JST CREST²)

Break 10:30〜10:45 （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[18a-D8-7] Investigation on the mechanism for data retention in MONOS memories with changing Si content in charge trap SiN layer

^○Shosuke Fujii¹, Naoki Yasuda¹ (Toshiba¹)

11:00 AM - 11:15 AM

△ [18a-D8-8] A guideline for SiN design for the improvement of both erase and retention performances in MONOS memories

^○Shosuke Fujii¹, Naoki Yasuda¹ (Toshiba¹)

11:15 AM - 11:30 AM

[18a-D8-9] Influence of the Work Function of Metal Gate Electrodes on UV-Light-Induced Conduction Currents through Silicon Nitride Films

^○（M1）Aran Suzuki¹, Kiyoteru Kobayashi¹ (Tokai Univ.¹)

11:30 AM - 11:45 AM

[18a-D8-10] High-temperature memory retention properties of Al/Al₂O₃/Al-rich Al-O/SiO₂/p-Si gate structure

^○Shinya Ozaki¹, Takeshi Kawae², Akiharu Morimoto² (Grad. School of Natural Sci. & Tech. Kanazawa Univ.¹, College of Sci. & Eng. Kanazawa Univ.²)

11:45 AM - 12:00 PM

▲ [18a-D8-11] Effects of Annealing Ambient on the Electrical Properties of HfN Gate Insulator Formed by ECR Plasma Sputtering

^○（M2）Nithi Atthi¹, Dae-Hee Han¹, Shun-ichiro Ohmi¹ (Tokyo Institute of Technology¹)

12:00 PM - 12:15 PM

[18a-D8-12] Mechanism of Dipole Layer Formation at High-k/SiO2 Interface: Multipole-induced Oxygen Migration Model

^○Shimura Kosuke¹, Ryo Kuriyama¹, Masahiro Hashiguchi¹, Ryusuke Takahashi¹, Atsushi Ogura^3,5, Shinichi Satoh^4,5, Takanobu Watanabe^1,2,5 (Waseda Univ.¹, Waseda-INN², Meiji Univ.³, University of Hyogo⁴, JST-CREST⁵)

Oral presentation

[18p-D8-1~15] 13.2 Insulator technology

Tue. Mar 18, 2014 1:30 PM - 5:30 PM D8 (D215)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:15〜13:30 （12:15 PM - 1:30 PM）

1:30 PM - 1:45 PM

[18p-D8-1] Improvement of Interfacial Properties of High-k/Ge Gate Stacks by Post-Metal Anneal

^○Ryohei Tanaka¹, Iori Hideshima¹, Yuya Minoura¹, Akitaka Yoshigoe², Yuden Teraoka², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka Univ.¹, JAEA²)

1:45 PM - 2:00 PM

△ [18p-D8-2] Al/Ge Simultaneous Oxidation Process by using Oxygen Neutral Beam for Ge Gate Stack

^○Daiki Nakayama¹, Takeo Ohno², Masaki Kitajo¹, Seiji Samukawa^1,2 (IFS, Tohoku Univ.¹, WPI-AIMR, Tohoku Univ.²)

2:00 PM - 2:15 PM

[18p-D8-3] Low-temperature fabrication of Al2O3/Ge gate stacks using post plasma oxidation

^○Yuta Nagatomi¹, Yuichi Nagaoka¹, Kesuke Yamamoto², Dong Wang¹, Hiroshi Nakashima² (I-Eggs, Kyushu Univ.¹, KASTEC, Kyushu Univ.²)

2:15 PM - 2:30 PM

△ [18p-D8-4] Interface Engineering of HfO₂/Ge Gate Stack Structure by Rutile TiO₂ Inter Layer

^○Kazuyoshi Kobashi^1,2, Takahiro Nagata², Toshihide Nabatame², Yoshiyuki Yamashita², Atsushi Ogura¹, Toyohiro Chikyow² (Meiji Univ.¹, NIMS²)

2:30 PM - 2:45 PM

[18p-D8-5] Fabrication and Evaluation of GeO₂/Ge structure Using Kr/O₂ Plasma Oxidation

^○Yuya Nakatani¹, Marina Yamaguchi¹, Yoshitaka Iwasaki¹, Tomo Ueno¹ (Tokyo Univ. of Agri & Tech¹)

2:45 PM - 3:00 PM

△ [18p-D8-6] Physical Factor Determining Interface State Density of Gate-insulator/Ge Interface during Oxidation Process

^○Shigehisa Shibayama^1,2, Kimihiko Kato¹, Mitsuo Sakashita¹, Wakana Takeuchi¹, Noriyuki Taoka¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Graduate School of Eng., Nagoya Univ.¹, JSPS Research Fellow²)

3:00 PM - 3:15 PM

[18p-D8-7] Quantitative evaluation of slow traps near Ge MOS interfaces by using time response of MOS capacitance

^○Katsuhisa Tanaka^1,2, Rui Zhang^1,2, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (Univ. of Tokyo¹, JST-CREST²)

3:15 PM - 3:30 PM

△ [18p-D8-8] The impact of Ge composition on the improvement of the interface trap density at Al2O3/SiGe MOS interface with plasma post-nitridation

^○（M2）Jaehoon Han^1,2, Rui Zhang^1,2, Takenori Osada³, Masahiko Hata³, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (Univ. of Tokyo¹, JST-CREST², Sumitomo Chemical Co. Ltd.³)

Break 15:30〜15:45 （3:30 PM - 3:45 PM）

3:45 PM - 4:00 PM

△ [18p-D8-9] Theoretical study for adsorption of tri-methyl aluminum molecule on GaN (0001) surface

^○Shunsuke Chikada¹, Masakazu Takao¹, Atsushi Honda¹, Shin'ichi Higai¹, Kousuke Shiratsuyu¹, Takashi Fujii¹ (Murata Manufacturing¹)

4:00 PM - 4:15 PM

△ [18p-D8-10] Robustness of Sn Precipitation at Ge_1-xSn_x Surface on Ge(001) during Thermal Oxidation

^○Kimihiko Kato¹, Takanori Asano¹, Noriyuki Taoka¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya Univ.¹)

4:15 PM - 4:30 PM

△ [18p-D8-11] Study of the pre-deposition treatment for Al₂O₃/GaSb MOS structures

^○（M1）Takahiro Gotow^1,2, Sachie Fujikawa¹, Hiroki I. Fujishiro¹, Mutsuo Ogura², Tetsuji Yasuda², Tatsuro Maeda² (TUS¹, AIST²)

4:30 PM - 4:45 PM

[18p-D8-12] Impact of ALD process on of La₂O₃/InGaAs interface roughness

^○Hiroshi Omine¹, Dariush Hassan Zadeh¹, Kuniyuki Kakushima², Akira Nishiyama², Nobuyuki Sugii², Yoshinori Kataoka², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (FRC Tokyo Tech¹, IGSSE Tokyo Tech²)

4:45 PM - 5:00 PM

▲ [18p-D8-13] Ga2O3 and Al2O3 hybrid passivation for improving of HfO2/InGaAs MIS characteristics

^○Wipakorn Jevasuwan¹, Tatsuro Maeda¹, Noriyuki Miyata¹, Minuro Oda¹, Toshifumi Irisawa¹, Tsutomu Tezuka¹, Tetsuji Yasuda¹ (AIST¹)

5:00 PM - 5:15 PM

△ [18p-D8-14] Low D_it La₂O₃/In_0.53Ga_0.47As Gate Stack scaled to sub-nm CET

^○（PC）Daryoush Hassan Zadeh¹, Hiroshi Oomine¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

5:15 PM - 5:30 PM

△ [18p-D8-15] Electron mobility improvement due to GaO_x passivation layer formed by pre-deposition anneal in HfO₂/In_0.53Ga_0.47As nMISFET with sub-1.0 nm EOT

^○Minoru Oda¹, Toshifumi Irisawa¹, Yuuichi Kamimuta¹, Jevasuwan Wipakorn¹, Tatsuro Maeda¹, Osamu Ichikawa², Toshio Ishihara², Osada Takenori², Tsutomu Tezuka¹ (AIST-GNC¹, Sumitomo Chemical Co. Ltd.²)

Poster presentation

[19p-PG2-1~12] 13.2 Insulator technology

Wed. Mar 19, 2014 4:00 PM - 6:00 PM PG2 (G棟2階)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:00 PM - 6:00 PM

[19p-PG2-1] Passivation of Silicon Surfaces by Oxygen Plasma Treatments

^○（M2）Tomohito Node¹, Shinya Yoshidomi¹, Jun Furukawa¹, Hiroshi Abe¹, Masahiko Hasumi¹, Toshiyuki Sameshima¹ (Tokyo Univ. of Agriculture and Technology¹)

4:00 PM - 6:00 PM

[19p-PG2-2] Penetration of H2O and HBr molecules into SiNx films with Si deficits

^○Tomoki Oku¹, Toshihiko Shiga¹, Masahiro Totsuka¹, Masayoshi Takemi¹ (Mitsubishi Electric Corp.¹)

4:00 PM - 6:00 PM

[19p-PG2-3] Density Distribution of Oxide Thermally grown on Silicon Surface

^○（M2）Syuhei Doi¹, Mariko Hayashi¹, Ryu Hasunuma¹, Kikuo Yamabe¹ (Tsukuba Univ.¹)

4:00 PM - 6:00 PM

[19p-PG2-4] Comparative study on reliability of ultrathin amorphous and polycrystalline HfO2 films

^○Yusuke Tomura¹, Ryu Hasunuma¹, Kikuo Yamabe¹, Shinji Migita² (Tsukuba Univ.¹, AIST NRI.²)

4:00 PM - 6:00 PM

[19p-PG2-5] Physical understanding of La-silicate gate dielectrics thermally formed by interface reaction on Si(110) and (111)

^○Takuya Seki¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, IGSSE²)

4:00 PM - 6:00 PM

[19p-PG2-6] DLTS Evaluation of Near-Interface Traps in Ge-MIS Structures with Aluminum-Germanate Insulator Layers Fabricated by ALD Techniques

^○Hidefumi Narita¹, Yukio Fukuda², Yohei Otani², Kosei Yanachi², Takehiro Hanada², Hiroki Ishizaki², Hiroshi Okamoto¹ (Hirosaki Univ.¹, Tokyo Univ. of Sci.²)

4:00 PM - 6:00 PM

[19p-PG2-7] Investigation of Suppression Mechanism of High-k/Ge Interfacial Reaction Using Ultrathin AlOx Insertion

^○Shingo Ogawa^{1, 2}, Naohiko Kawasaki¹, Kosuke Kimura¹, Ryohei Tanaka², Yuya Minoura², Takuji Hosoi², Takayoshi Shimura², Heiji Watanabe² (TRC¹, Osaka Univ.²)

4:00 PM - 6:00 PM

[19p-PG2-8] Fabrication and Evaluation of Germanium Oxide Film made by a CVD process

^○（M1）Yuto Matsuoka¹, Yoshitaka Iwasaki¹, Tomo Ueno¹ (Tokyo Univ. of Agri. & Tech¹)

4:00 PM - 6:00 PM

[19p-PG2-9] Oxidation of Ge Surface by Microwave-generated Oxygen Radical Irradiation

^○Kosei Yanachi¹, Rikii Harada¹, Byeonghak Yoo¹, Keita Seki², Hiroki Ishizaki¹, Yohei Otani¹, Tetsuya Sato², Yukio Fukuda¹ (Tokyo Univ. of Science, Suwa¹, Univ. of Yamanashi²)

4:00 PM - 6:00 PM

[19p-PG2-10] Formation of GeO₂ Thin Films on p-Ge Substrate by Reactive RF Sputtering

^○Byeonghak Yoo¹, Keita Seki², Taito Kikuchi¹, Kosei Yanachi¹, Hiroki Ishizaki¹, Yohei Otani¹, Tetsuya Sato², Yukio Fukuda¹ (Tokyo University of Science, Suwa¹, University of Yamanashi²)

4:00 PM - 6:00 PM

[19p-PG2-11] Determination of oxide traps distribution in high-k/InGaAs MOS capacitor by capacitance-voltage measurement

^○Chunmeng Dou¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui¹, Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. Frontier research center¹, Tokyo Tech. Interdisciplinary Graduate School of Science and Engineering²)

4:00 PM - 6:00 PM

[19p-PG2-12] Effect of additional metal atoms in ALD-Al₂O₃/InGaAs interface

^○Toshiyuki Yoshida¹ (Shimane Univ.¹)

Sessions

13. Semiconductors A (Silicon) » 13.2 Insulator technology

[18a-D8-1~12] 13.2 Insulator technology

△ [18a-D8-1] Control of dielectric constant of Diamond-Like Carbon Films grown by Photoemission-Assisted Plasma-Enhanced CVD: From Low-k to High-k

△ [18a-D8-2] Evaluation of short range order in SiO2 thin-film by grazing-incidence wide and small-angle X-ray scattering

△ [18a-D8-4] Detailed study of the relationship between SiO2 degradation and hydrogen movement using nuclear reaction analysis

▲ [18a-D8-6] Effects of biaxially-tensile strain on properties of Si/SiO2 interface states generated by electrical stress

△ [18a-D8-8] A guideline for SiN design for the improvement of both erase and retention performances in MONOS memories

▲ [18a-D8-11] Effects of Annealing Ambient on the Electrical Properties of HfN Gate Insulator Formed by ECR Plasma Sputtering

[18p-D8-1~15] 13.2 Insulator technology

△ [18p-D8-2] Al/Ge Simultaneous Oxidation Process by using Oxygen Neutral Beam for Ge Gate Stack

△ [18p-D8-4] Interface Engineering of HfO2/Ge Gate Stack Structure by Rutile TiO2 Inter Layer

△ [18p-D8-6] Physical Factor Determining Interface State Density of Gate-insulator/Ge Interface during Oxidation Process

△ [18p-D8-8] The impact of Ge composition on the improvement of the interface trap density at Al2O3/SiGe MOS interface with plasma post-nitridation

△ [18p-D8-9] Theoretical study for adsorption of tri-methyl aluminum molecule on GaN (0001) surface

△ [18p-D8-10] Robustness of Sn Precipitation at Ge1-xSnx Surface on Ge(001) during Thermal Oxidation

△ [18p-D8-11] Study of the pre-deposition treatment for Al2O3/GaSb MOS structures

▲ [18p-D8-13] Ga2O3 and Al2O3 hybrid passivation for improving of HfO2/InGaAs MIS characteristics

△ [18p-D8-14] Low Dit La2O3/In0.53Ga0.47As Gate Stack scaled to sub-nm CET

△ [18p-D8-15] Electron mobility improvement due to GaOx passivation layer formed by pre-deposition anneal in HfO2/In0.53Ga0.47As nMISFET with sub-1.0 nm EOT

[19p-PG2-1~12] 13.2 Insulator technology

△ [18p-D8-4] Interface Engineering of HfO₂/Ge Gate Stack Structure by Rutile TiO₂ Inter Layer

△ [18p-D8-10] Robustness of Sn Precipitation at Ge_1-xSn_x Surface on Ge(001) during Thermal Oxidation

△ [18p-D8-11] Study of the pre-deposition treatment for Al₂O₃/GaSb MOS structures

△ [18p-D8-14] Low D_it La₂O₃/In_0.53Ga_0.47As Gate Stack scaled to sub-nm CET

△ [18p-D8-15] Electron mobility improvement due to GaO_x passivation layer formed by pre-deposition anneal in HfO₂/In_0.53Ga_0.47As nMISFET with sub-1.0 nm EOT