[18p-D8-1~15] 13.2 Insulator technology

△ [18p-D8-6] Physical Factor Determining Interface State Density of Gate-insulator/Ge Interface during Oxidation Process

^○Shigehisa Shibayama^1,2, Kimihiko Kato¹, Mitsuo Sakashita¹, Wakana Takeuchi¹, Noriyuki Taoka¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Graduate School of Eng., Nagoya Univ.¹, JSPS Research Fellow²)

Keywords:界面準位密度,酸化速度,Ge