Effects of biaxially-tensile strain on properties of Si/SiO2 interface states generated by electrical stress

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.2 Insulator technology

Tue. Mar 18, 2014 9:00 AM - 12:15 PM D8 (D215)

10:15 AM - 10:30 AM

^○Weili Cai^1,2, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (Tokyo Univ.¹, JST CREST²)

Keywords:interface state