Effects of Annealing Ambient on the Electrical Properties of HfN Gate Insulator Formed by ECR Plasma Sputtering

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.2 Insulator technology

Tue. Mar 18, 2014 9:00 AM - 12:15 PM D8 (D215)

11:45 AM - 12:00 PM

^○（M2）Nithi Atthi¹, Dae-Hee Han¹, Shun-ichiro Ohmi¹ (Tokyo Institute of Technology¹)

Keywords:Hafnium nitride,ECR plasma sputtering,high-k gate insulator