[19p-PG2-1~12] 13.2 Insulator technology

[19p-PG2-7] Investigation of Suppression Mechanism of High-k/Ge Interfacial Reaction Using Ultrathin AlOx Insertion

^○Shingo Ogawa^{1, 2}, Naohiko Kawasaki¹, Kosuke Kimura¹, Ryohei Tanaka², Yuya Minoura², Takuji Hosoi², Takayoshi Shimura², Heiji Watanabe² (TRC¹, Osaka Univ.²)

Keywords:ゲルマニウム,STEM