[19p-PG3-1~32] 13.3 Si Process・Interconnect・MEMS・Integration

[19p-PG3-14] High Performance Metal Gate/high-k SOI FinFETs by Heated Ion Implantation

^○Wataru Mizubayashi¹, Hiroshi Onoda², Yoshiki Nakashima², Yuki Ishikawa¹, Takashi Matsukawa¹, Kazuhiko Endo¹, Yongxun Liu¹, Shinichi O’uchi¹, Junichi Tsukada¹, Hiromi Yamauchi¹, Shinji Migita¹, Yukinori Morita¹, Hiroyuki Ota¹, Meishoku Masahara¹ (AIST¹, Nissin Ion Equipment²)

Keywords:高温イオン注入,FinFETs,ソース／ドレイン