[19p-PG3-1~32] 13.3 Si Process・Interconnect・MEMS・Integration

[19p-PG3-15] Introduction of strain to Ge channels and reduction of parasitic resistance by epitaxially grown n⁺-Ge/n⁺-SiGe stacked stressors for Ge-nMISFETs

^○Yoshihiko Moriyama^1,2, Yuuichi Kamimuta¹, Yoshiki Kamata¹, Keiji Ikeda¹, Shotaro Takeuchi², Yoshiaki Nakamura², Akira Sakai², Tsutomu Tezuka¹ (GNC-AIST¹, Osaka Univ.²)

Keywords:ひずみGe,コンタクト抵抗,in-situ doping