Electrical properties and impurity diffusion of P incorporated NiSi<sub>2</sub>/<i>n</i>-Ge contat

Ryo Yoshihara

Presentation information

Poster presentation

13. Semiconductors A (Silicon) » 13.3 Si Process・Interconnect・MEMS・Integration

[19p-PG3-1~32] 13.3 Si Process・Interconnect・MEMS・Integration

Wed. Mar 19, 2014 4:00 PM - 6:00 PM PG3 (G棟2階)

4:00 PM - 6:00 PM

[19p-PG3-16] Electrical properties and impurity diffusion of P incorporated NiSi₂/n-Ge contat

^○Ryo Yoshihara¹, Masaaki Motoki¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

Keywords:不純物拡散,ニッケルシリサイド

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Presentation information

[19p-PG3-1~32] 13.3 Si Process・Interconnect・MEMS・Integration

[19p-PG3-16] Electrical properties and impurity diffusion of P incorporated NiSi2/n-Ge contat

[19p-PG3-16] Electrical properties and impurity diffusion of P incorporated NiSi₂/n-Ge contat