[19p-PG3-1~32] 13.3 Si Process・Interconnect・MEMS・Integration

[19p-PG3-17] Behavior of Phosphorous and Impurities from Molecular Doping on Silicon Studied by Atom Probe Tomography

^○Yasuo Shimizu¹, Hisashi Takamizawa¹, Koji Inoue¹, Fumiko Yano^1,2, Yasuyoshi Nagai¹, Luca Lamagna³, Giovanni Mazzeo^3,4, Michele Perego³, Enrico Prati³ (IMR Tohoku Univ.¹, Tokyo City Univ.², Laboratorio MDM, CNR-IMM³, Universita di Milano Bicocca⁴)

Keywords:アトムプローブ,分子ドーピング法