[19p-PG3-1~32] 13.3 Si Process・Interconnect・MEMS・Integration

[19p-PG3-20] Ozone Radical Treatment on Laser-Crystallized Poly-Si thin films for Reducing TFT Off-Leakage Current

^○Tatsuaki Hirata¹, Shin-Ichiro Kuroki¹, Masayuki Yamano¹, Tadashi Sato¹, Kouji Kotani², Takamato Kikkawa¹ (Hiroshima Univ. (RNBS)¹, Tohoku Univ.²)

Keywords:poly-Si,オゾンラジカル処理