[19p-PG3-1~32] 13.3 Si Process・Interconnect・MEMS・Integration

[19p-PG3-25] NiGe/n⁺Ge junctions with ultralow contact resistivity (∼3×10^-8 Ωcm²) formed by two-step P-ion implantation

^○Masahiro Koike¹, Yuuichi Kamimuta¹, Etsuo Kurosawa¹, Tsutomu Tezuka¹ (GNC, AIST¹)

Keywords:半導体,ゲルマニウム,ショットキー