[19p-PG3-1~32] 13.3 Si Process・Interconnect・MEMS・Integration

[19p-PG3-7] Study of Cotrolling initial profile of thin-film torsion-bars of vibrational IR sensor

^○（P）Jonghyeon Jeong¹, Tatsuya Yamazaki¹, Shinya Kumagai^1,3, Ichiro Yamashita^2,3, Yukiharu Uraoka^2,3, Minoru Sasaki^1,3 (Toyota Technological Inst.¹, NAIST², CREST/JST³)

Keywords:IR sensor,torsion-bar,crystallization-induced tensile stress