Formation of B-doped BaSi<sub>2</sub> films by RF sputtering on a heated glass substrate

Nurul Amal AbdulLatiff

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Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[20a-D3-1~11] 14.1 Physical properties of exploratory materials

Thu. Mar 20, 2014 9:00 AM - 12:00 PM D3 (D114)

9:00 AM - 9:15 AM

▲ [20a-D3-1] Formation of B-doped BaSi₂ films by RF sputtering on a heated glass substrate

^○（M1）Nurul Amal AbdulLatiff¹, Takahiro Yoneyama¹, Masami Mesuda², Hideto Kuramochi², Kaoru Toko¹, Takashi Suemasu^1,3 (Inst. of Appl. Phys. Univ. Tsukuba¹, Tosoh Corporation², JST-CREST³)

Keywords:silicide,sputtering

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Presentation information

[20a-D3-1~11] 14.1 Physical properties of exploratory materials

▲ [20a-D3-1] Formation of B-doped BaSi2 films by RF sputtering on a heated glass substrate

▲ [20a-D3-1] Formation of B-doped BaSi₂ films by RF sputtering on a heated glass substrate