As Ion Implantation and High-Temperature Annealing of BaSi<sub>2</sub> Epitaxial Films

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

Thu. Mar 20, 2014 9:00 AM - 12:00 PM D3 (D114)

9:15 AM - 9:30 AM

^○Kosuke Hara^1,2, Noritaka Usami^1,2, Masakazu Baba³, Kaoru Toko³, Takashi Suemasu^2,3 (Nagoya Univ.¹, JST-CREST², Univ. of Tsukuba³)

Keywords:シリサイド半導体,不純物ドーピング