The 61st JSAP Spring Meeting, 2014

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[20a-D8-1~11] 14.3 Electron devices and Process technology

Thu. Mar 20, 2014 9:00 AM - 12:00 PM D8 (D215)

9:00 AM - 9:15 AM

[20a-D8-1] Band Offsets of NO2-Exposed H-Terminated Diamond/Al2O3 Interface Determined by Synchrotron Radiation XPS/UPS/XANES

○Makoto Kasu1, Kaxzutoshi Takahashi2, Masayuki Imamura2, Kazuyuki Hirama3 (Saga Univ.1, Synchrotron Light Application Center, Saga Univ2, NTT Basic Research Labs3)

Keywords:ダイヤモンド,ヘテロ接合