The 61st JSAP Spring Meeting, 2014

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[20a-D8-1~11] 14.3 Electron devices and Process technology

Thu. Mar 20, 2014 9:00 AM - 12:00 PM D8 (D215)

9:15 AM - 9:30 AM

△ [20a-D8-2] Capacitance-Voltage Characteristics of Diamond MOSFET

○（B）Kazuya Harada1, Kazuyuki Hirama2, Makoto Kasu1 (Saga Univ.1, NTT BRL.2)

Keywords:半導体,ダイヤモンド