Depletion-mode Ga<sub>2</sub>O<sub>3</sub> metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated by using Si-ion implantation

Masataka Higashiwaki

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Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[20a-D8-1~11] 14.3 Electron devices and Process technology

Thu. Mar 20, 2014 9:00 AM - 12:00 PM D8 (D215)

9:30 AM - 9:45 AM

[20a-D8-3] Depletion-mode Ga₂O₃ metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated by using Si-ion implantation

^○Masataka Higashiwaki¹, Kohei Sasaki^2,1, Wong Man Hoi¹, Takafumi Kamimura¹, Krishnamurthy Daivasigamani¹, Akito Kuramata², Takekazu Masui³, Shigenobu Yamakoshi² (NICT¹, Tamura Corp.², Koha Co., Ltd.³)

Keywords:酸化ガリウム,Ga2O3,MOSFET

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Presentation information

[20a-D8-1~11] 14.3 Electron devices and Process technology

[20a-D8-3] Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated by using Si-ion implantation

[20a-D8-3] Depletion-mode Ga₂O₃ metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated by using Si-ion implantation