Interface reaction analysis of La2O3/SiC upon annealing by ATR-FTIR

Yiming Lei

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[20a-D8-1~11] 14.3 Electron devices and Process technology

Thu. Mar 20, 2014 9:00 AM - 12:00 PM D8 (D215)

10:45 AM - 11:00 AM

[20a-D8-7] Interface reaction analysis of La2O3/SiC upon annealing by ATR-FTIR

^○Yiming Lei¹, Shu Munekiyo¹, Kuniyuki Kakushima¹, Takamasa Kawanago², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui¹, Satoshi Yamakawa³, Hiroshi Iwai¹, Masayuki Huruhashi³, Naruhisa Miura³, Kenji Natori¹ (Tokyo Tech.FRC¹, Tokyo Tech.IGSSE², Mitsubishi Electric Corp.³)

Keywords:SiC,La2O3,界面反応