C-V characteristics of SiC-MOS capacitors with La-silicate interfacial layer

Shu Munekiyo

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[20a-D8-1~11] 14.3 Electron devices and Process technology

Thu. Mar 20, 2014 9:00 AM - 12:00 PM D8 (D215)

11:00 AM - 11:15 AM

[20a-D8-8] C-V characteristics of SiC-MOS capacitors with La-silicate interfacial layer

^○Shu Munekiyo¹, Yiming Lei¹, Kuniyuki Kakushima¹, Takamasa Kawanago², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui¹, Satoshi Yamakawa³, Kenji Natori¹, Hiroshi Iwai¹, Masayuki Huruhashi³, Naruhisa Miura³ (Tokyo Tech.FRC¹, Tokyo Tech.IGSSE², Mitsubishi Electric Corp.³)

Keywords:SiC,La-silicate,界面層