The 61st JSAP Spring Meeting, 2014

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15. Crystal Engineering » 15.4 III-V-group nitride crystals

[20a-E13-1~10] 15.4 III-V-group nitride crystals

Thu. Mar 20, 2014 9:00 AM - 11:45 AM E13 (E301)

9:45 AM - 10:00 AM

[20a-E13-4] InN/YSZ-based field effect transistors

○Masaaki Oseki1, Atsushi Kobayashi1, Jitsuo Ohta1, Hiroshi Fujioka1,2 (Institute of Industrial Science, The University of Tokyo1, JST-CREST2)

Keywords:InN