The 61st JSAP Spring Meeting, 2014

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13. Semiconductors A (Silicon) » 13.3 Si Process・Interconnect・MEMS・Integration

[20a-E14-1~10] 13.3 Si Process・Interconnect・MEMS・Integration

Thu. Mar 20, 2014 9:00 AM - 11:45 AM E14 (E302)

9:30 AM - 9:45 AM

▲ [20a-E14-3] Analysis of F loss during the chemical dry etching of Si using NO and F2 gases (I)

○Satomi Tajima1, Toshio Hayashi1, Kenji Ishikawa1, Makoto Sekine1, Minoru Sasaki2, Koji Yamakawa3, Masaru Hori1 (Nagoya Univ.1, Toyota Tech. Inst.2, Katagiri Engineering, Co., Ltd.3)

Keywords:衝突