[20a-E14-1~10] 13.3 Si Process・Interconnect・MEMS・Integration

[20a-E14-5] Three-Dimensional Investigation of Dopant Diffusion in Polycrystalline Silicon of Trench Gate Structure

Hisashi Takamizawa¹, Yasuo Shimizu¹, ^○Koji Inoue¹, Fumiko Yano^1,2, Yasuyoshi Nagai¹, Yorinobu Kunimune³, Masao Inoue³, Akio Nishida³, Masahiro Ikeda³ (IMR, Tohoku Univ.¹, Tokyo City Univ.², Renesas Electronics Corp.³)

Keywords:アトムプローブ,多結晶シリコン,不純物分布