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13. Semiconductors A (Silicon) » 13.3 Si Process・Interconnect・MEMS・Integration

[20a-E14-1~10] 13.3 Si Process・Interconnect・MEMS・Integration

Thu. Mar 20, 2014 9:00 AM - 11:45 AM E14 (E302)

9:45 AM - 10:00 AM

[20a-E14-4] Process development for next generation DRAM electrode using a new Ru-CVD/ALD precursor(2)

^○Taewoong Kim¹, Takeshi Momose¹, Yukihiro Shimogaki¹ (University of Tokyo¹)

Keywords:Ru