[20a-E2-1~12] 17.4 Device application

△ [20a-E2-5] Experimental Study on Three-terminal Operation for Graphene ReRAM

^○Aya Shindome^1,2, Tsunaki Takahashi², Shunri Oda³, Ken Uchida^1,2 (Tokyo Inst. of Technology¹, Keio Univ.², Tokyo Inst. of Technology³)

Keywords:グラフェン,抵抗変化型メモリ