[20a-F10-1~13] 13.5 Si-English Session

▲ [20a-F10-1] Variation Behaviors of Tunnel-FETs and MOSFETs Compared on an SOI

^○Shinji Migita¹, Takahiro Mori¹, Takashi Matsukawa¹, Koichi Fukuda¹, Yukinori Morita¹, Wataru Mizubayashi¹, Akito Tanabe¹, Kazuhiko Endo¹, Yongxun Liu¹, Shinichi O'uchi¹, Meishoku Masahara¹, Hiroyuki Ota¹ (AIST GNC¹)

Keywords:Tunnel-FET,variation,SOI