[20a-F10-1~13] 13.5 Si-English Session

▲ [20a-F10-3] Improvement of High-N_s Electron Mobility in Ge n-MOSFETs with Atomically Flat GeO₂/Ge interface

^○ChoongHyunLee^1,2，TomonoriNishimura^1,2，CimangLu^1,2，WenfengZhang^1,2，KosukeNagashio^1,2，AkiraToriumi^1,2 (東大¹，JST-CREST²)

キーワード：Ge,MOSFETs,Mobility