The 61st JSAP Spring Meeting, 2014

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Oral presentation

13. Semiconductors A (Silicon) » 13.4 Devices/Integration Technologies

[20a-F12-1~13] 13.4 Devices/Integration Technologies

Thu. Mar 20, 2014 9:00 AM - 12:30 PM F12 (F408)

10:30 AM - 10:45 AM

[20a-F12-7] Filament formation during repeatedly resistive switching of Cu / MoOx ReRAMs

○Masaki Kudo1, Yuuki Ohno1, Takahiro Hiroi1, Takashi Fujimoto2, Kouichi Hamada1, Masashi Arita1, Yasuo Takahashi1 (Graduate School of IST, Hokkaido Univ.1, Faculty of Eng. , Hokkaido Univ.2)

Keywords:抵抗変化型メモリ,MoOx,TEMその場観察