[20a-PG1-1~17] 15.4 III-V-group nitride crystals

[20a-PG1-14] RF-MBE Growth of AlN on a Sapphire Substrate using an AlON Buffer Layer

^○Toshiki Makimoto¹, Kazuhide Kumakura², Michiya Maeda¹, Yuki Kobayashi¹, Hideki Yamamoto², Yoshiji Horikoshi¹ (Waseda Univ.¹, NTT Basic Research Lab.²)

Keywords:AlN,MBE,サファイア基板