The 61st JSAP Spring Meeting, 2014

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Poster presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[20a-PG1-1~17] 15.4 III-V-group nitride crystals

Thu. Mar 20, 2014 9:30 AM - 11:30 AM PG1 (G棟2階)

9:30 AM - 11:30 AM

[20a-PG1-15] Growth of GaN layers on GaAs(110) by RF-MBE

○（M2）Takeshi Ikarashi1, Misao Orihara1, Syuhei Yagi1, Yasuto Hijikata1, Shigeyuki Kuboya2, Ryuji Katayama2, Hiroyuki Yaguchi1 (Saitama Univ.1, Tohoku Univ.2)

Keywords:半導体,GaN