Electrical Characterization of Thick InGaN Films by Mercury-Probes

Presentation information

Poster presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Thu. Mar 20, 2014 9:30 AM - 11:30 AM PG1 (G棟2階)

9:30 AM - 11:30 AM

^○Yoshitaka Nakano¹, Fumio Hasegawa¹, Sang Liwen², Masatomo Sumiya² (Chubu Univ.¹, NIMS²)

Keywords:InGaN,欠陥準位,光容量過渡分光法