The 61st JSAP Spring Meeting, 2014

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[20p-D8-1~8] 14.3 Electron devices and Process technology

Thu. Mar 20, 2014 1:00 PM - 3:00 PM D8 (D215)

1:00 PM - 1:15 PM

[20p-D8-1] High-breakdown-voltage InP/InGaAs DHBT with an fmax of over 400 GHz

○Norihide Kashio1, Kenji Kurishima1, Minoru Ida1, Hideaki Matsuzaki1 (NTT Photonics Lab.1)

Keywords:ＨＢＴ