Optical characteristics of InGaN films grown by pulsed sputtering

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Thu. Mar 20, 2014 1:00 PM - 3:00 PM E13 (E301)

1:00 PM - 1:15 PM

^○Kohei Ueno¹, Hidenari Noguchi², Jitsuo Ohta², Hiroshi Fujioka^2,3, Masaharu Oshima¹ (The Univ. of Tokyo¹, IIS, The Univ. of Tokyo², JST-CREST³)

Keywords:InGaN