The 61st JSAP Spring Meeting, 2014

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15. Crystal Engineering » 15.4 III-V-group nitride crystals

[20p-E13-1~8] 15.4 III-V-group nitride crystals

Thu. Mar 20, 2014 1:00 PM - 3:00 PM E13 (E301)

1:15 PM - 1:30 PM

[20p-E13-2] Dependence of radiative and nonradiative recombination lifetime on excitation energy density in InGaN/GaN multiple quantum wells

○Hideaki Murotani1, Toko Sugiura1, Yoichi Yamada2, Yoshio Honda3, Hiroshi Amano3 (Toyota Natl. Coll. Technol.1, Yamaguchi Univ.2, Nagoya Univ.3)

Keywords:InGaN MQW,時間分解PL