[20p-E13-1~8] 15.4 III-V-group nitride crystals

△ [20p-E13-5] Carrier and phonon transport properties in determination of nonradiative carrier recombination rate in InN

^○Daichi Imai¹, Yoshihiro Ishitani¹, Xinqiang Wang², Kazuhide Kusakabe³, Akihiko Yoshikawa³, Ken Morita¹, Bei Ma¹ (Graduate school of Engineering, Chiba Univ.¹, School of Physics, Peking Univ.², Center for SMART GIR, Chiba Univ.³)

Keywords:InN,非輻射再結合,Phonon