The 61st JSAP Spring Meeting, 2014

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13. Semiconductors A (Silicon) » 13.3 Si Process・Interconnect・MEMS・Integration

[20p-E14-1~4] 13.3 Si Process・Interconnect・MEMS・Integration

Thu. Mar 20, 2014 1:15 PM - 2:15 PM E14 (E302)

1:30 PM - 1:45 PM

△ [20p-E14-2] Role of Implanted P Atoms in NiGe/Ge Junction Characteristics

○Hiroshi Oka1, Yuya Minoura1, Takuji Hosoi1, Takayoshi Shimura1, Heiji Watanabe1 (Osaka Univ.1)

Keywords:NiGe/Ge,ショットキー障壁,低抵抗コンタクト