The 61st JSAP Spring Meeting, 2014

Presentation information

Oral presentation

12. Organic Molecules and Bioelectronics » 12.3 Functional materials and novel devices

[20p-E6-1~7] 12.3 Functional materials and novel devices

Thu. Mar 20, 2014 1:00 PM - 2:45 PM E6 (E106)

1:15 PM - 1:30 PM

[20p-E6-2] Memory characteristics of gate insulator consisting of fullerene compound

Daiki Fujii1, Masatoshi Uchino1, Anri Nakajima1 (Hiroshima Univ. RNBS1)

Keywords:フラーレン,有機メモリ