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13. Semiconductors A (Silicon) » 13.4 Devices/Integration Technologies

[20p-F12-1~6] 13.4 Devices/Integration Technologies

Thu. Mar 20, 2014 1:30 PM - 3:00 PM F12 (F408)

2:30 PM - 2:45 PM

[20p-F12-5] Drain Current Dependence of Statistical Distribution of Random Telegraph Noise (RTN) in Scaled MOSFETs

^○（M2）Hitoshi Ohno¹, Tomoko Mizutani¹, Toshiro Hiramoto¹ (IIS¹)

Keywords:RTN,RTS,MOSFET